- 专利标题: Epitaxial imprinting
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申请号: US11182381申请日: 2005-07-15
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公开(公告)号: US07217629B2公开(公告)日: 2007-05-15
- 发明人: Toshiharu Furukawa , Carl Radens , William R. Tonti , Richard Q. Williams
- 申请人: Toshiharu Furukawa , Carl Radens , William R. Tonti , Richard Q. Williams
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
The present invention provides an epitaxial imprinting process for fabricating a hybrid substrate that includes a bottom semiconductor layer; a continuous buried insulating layer present atop said bottom semiconductor layer; and a top semiconductor layer present on said continuous buried insulating layer, wherein said top semiconductor layer includes separate planar semiconductor regions that have different crystal orientations, said separate planar semiconductor regions are isolated from each other. The epitaxial printing process of the present invention utilizing epitaxial growth, wafer bonding and a recrystallization anneal.
公开/授权文献
- US20070013001A1 Epitaxial imprinting 公开/授权日:2007-01-18