Invention Grant
- Patent Title: Tri-mode clock generator to control memory array access
- Patent Title (中): 三模式时钟发生器,用于控制存储器阵列的访问
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Application No.: US10948554Application Date: 2004-09-23
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Publication No.: US07224637B2Publication Date: 2007-05-29
- Inventor: Jon Allan Faue
- Applicant: Jon Allan Faue
- Applicant Address: TW Hsinchu
- Assignee: ProMOS Technologies Inc.
- Current Assignee: ProMOS Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Hogan & Hartson LLP
- Agent Peter J. Meza; William J. Kubida
- Main IPC: G11C8/18
- IPC: G11C8/18

Abstract:
A clock generator is provided that is compatible with both DDR1 and DDR2 applications. The internal YCLK signal is turned on only when an active read or write occurs on the integrated circuit memory, even though the main chip clock is always running. A circuit block within the clock generator detects when a read or write is active and initiates a YCLK signal on the next falling edge of the internal clock. Two separate mechanisms are used for determining when to terminate the YCLK. One mechanism is a timer path and the other is a path determined by DDR1 and DDR2 control signals. The timer path is strictly time based and is the same for DDR1 and DDR2 parts or modes of operation. The other signal path is different for DDR1 and DDR2 operating modes. A DDR1 control signal turns off YCLK at the next rising edge of the internal clock, and a DDR2 control signal turns off YCLK at the next falling edge of the internal clock.
Public/Granted literature
- US20060062064A1 Tri-mode clock generator to control memory array access Public/Granted day:2006-03-23
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