- 专利标题： Versatile system for optimizing current gain in bipolar transistor structures
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申请号： US10196634申请日： 2002-07-15
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公开(公告)号： US07226835B2公开(公告)日： 2007-06-05
- 发明人: Joe Trogolo , Tathagata Chatterlee , Lily Springer , Jeff Smith
- 申请人： Joe Trogolo , Tathagata Chatterlee , Lily Springer , Jeff Smith
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Peter K. McLarty; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L31/0328
- IPC分类号： H01L31/0328
摘要：
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
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