发明授权
- 专利标题： Nano-electrode-array for integrated circuit interconnects
- 专利标题（中）： 用于集成电路互连的纳米电极阵列
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申请号： US10990273申请日： 2004-11-15
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公开(公告)号： US07226856B1公开(公告)日： 2007-06-05
- 发明人: Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
- 申请人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
- 申请人地址： US CA Milpitas
- 专利权人： KLA-Tencor Technologies Corporation
- 当前专利权人： KLA-Tencor Technologies Corporation
- 当前专利权人地址： US CA Milpitas
- 代理商 Mikio Ishimaru
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
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