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    Apparatus and method for electroless deposition of materials on semiconductor substrates
    3.
    发明授权
    Apparatus and method for electroless deposition of materials on semiconductor substrates 有权

    公开(公告)号：US06913651B2

    公开(公告)日：2005-07-05

    申请号：US10103015

    申请日：2002-03-22

    申请人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

    发明人： Igor Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

    IPC分类号： C23C18/16 ,  H01L21/288 ,  B05C5/00 ,  B05C11/00

    CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

    摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

    Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper
    4.
    发明授权
    Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper 有权
    用于沉积钴的无活化无电解液和用于在铜上沉积钴覆盖/钝化层的方法

    公开(公告)号：US06902605B2

    公开(公告)日：2005-06-07

    申请号：US10379692

    申请日：2003-03-06

    申请人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

    发明人： Artur Kolics ,  Nicolai Petrov ,  Chiu Ting ,  Igor Ivanov

    IPC分类号： C23C18/36 ,  C23C18/50 ,  C23C18/34 ,  B05D1/18

    CPC分类号： H01L21/288 ,  C23C18/36 ,  C23C18/50 ,  H01L21/76849

    摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co—Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100-5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.

    摘要翻译： 本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有很高的耐氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。 无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。 来自引发剂的少量（100-5000ppm）元素也构成化学镀膜，预期与无引发剂的沉积浴相比，可以进一步提高所得膜的阻隔性能。 这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

    Apparatus and method for electroless deposition of materials on semiconductor substrates
    5.
    发明申请
    Apparatus and method for electroless deposition of materials on semiconductor substrates 有权
    在半导体衬底上无电沉积材料的装置和方法

    公开(公告)号：US20050221015A1

    公开(公告)日：2005-10-06

    申请号：US11138531

    申请日：2005-05-26

    申请人： Igor Ivanov ,  Jonathan Zhang ,  Artur Kolics

    发明人： Igor Ivanov ,  Jonathan Zhang ,  Artur Kolics

    IPC分类号： C23C18/16 ,  H01L21/288 ,  C25D3/56

    CPC分类号： C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

    摘要： An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.

    摘要翻译： 本发明的装置具有一个能够被密封并能承受增加的压力和高温的封闭室。 所述腔室包含能够围绕垂直轴线旋转的衬底保持器，以及衬底保持器内部的边缘抓握机构。 沉积室具有用于供应各种处理液体的多个入口端口，例如沉积溶液，用于冲洗的去离子水等，以及用于在压力下供应气体的端口。 该设备还设置有用于处理液体和气体的储存器和罐，以及用于控制室中的温度和压力的溶液加热器和控制系统。 加热器可以位于工作室外部或内置于基板支架中，也可以同时使用两个加热器。 通过在压力下和稍低于溶液沸点的温度下进行沉积工艺来实现均匀沉积。 该解决方案可以从上面通过形成在盖中的淋浴喷头或者通过室的底部供应。 冲洗或其它辅助溶液经由可平行于其上的衬底上方的可径向移动的化学分配臂供应。

    Proprietary watermark system for secure digital media and content distribution
    10.
    发明申请
    Proprietary watermark system for secure digital media and content distribution 失效
    专有水印系统，用于安全数字媒体和内容分发

    公开(公告)号：US20060193492A1

    公开(公告)日：2006-08-31

    申请号：US11415120

    申请日：2006-05-02

    申请人： Vsevolod Kuzmich ,  Igor Ivanov

    发明人： Vsevolod Kuzmich ,  Igor Ivanov

    IPC分类号： G06K9/00

    CPC分类号： G06T1/0021 ,  G06T2201/0051 ,  G06T2201/0052

    摘要： A method of generating a protected digital media content, is provided. According to an embodiment of the present invention, the method includes generating a protected digital media content, comprising: generating a first control signal for use in an authorization signature of digital media content, generating a second control signal for use in a certification of the content owner's right, and generating information about the digital media content; and adding the first control signal, the second control signal, and the information to the digital media content to provide a protected content.

    摘要翻译： 提供了一种产生受保护的数字媒体内容的方法。 根据本发明的实施例，该方法包括生成受保护的数字媒体内容，包括：产生用于数字媒体内容的授权签名的第一控制信号，产生用于内容认证的第二控制信号 所有者权利，并生成有关数字媒体内容的信息; 以及将第一控制信号，第二控制信号和信息添加到数字媒体内容以提供受保护的内容。