Invention Grant
US07229867B2 Process for producing a field-effect transistor and transistor thus obtained
有权
由此获得的场效应晶体管和晶体管的制造方法
- Patent Title: Process for producing a field-effect transistor and transistor thus obtained
- Patent Title (中): 由此获得的场效应晶体管和晶体管的制造方法
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Application No.: US11050411Application Date: 2005-02-03
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Publication No.: US07229867B2Publication Date: 2007-06-12
- Inventor: Thomas Skotnicki , Daniel Chanemougame , Stephane Monfray
- Applicant: Thomas Skotnicki , Daniel Chanemougame , Stephane Monfray
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Priority: FR0401018 20040203
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A substrate supporting a portion of a semiconductor material is used to produce a field-effect transistor. A portion of a temporary material lies between the portion of semiconductor material and the substrate. A gate is formed, which comprises an upper part in rigid connection with the portion of semiconductor material, and at least one bearing part settled on the substrate. The temporary material is removed and replaced with an electrically insulating material. During removal and replacement of the temporary material, the portion of semiconductor material is held in place relative to the substrate by the gate.
Public/Granted literature
- US20050214993A1 Process for producing a field-effect transistor and transistor thus obtained Public/Granted day:2005-09-29
Information query
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