Method and apparatus for allowing formation of self-aligned base contacts

Invention Grant

US07229874B2 Method and apparatus for allowing formation of self-aligned base contacts 失效

Title translation: 允许形成自对准基底触点的方法和装置

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Patent Title: Method and apparatus for allowing formation of self-aligned base contacts
Patent Title (中): 允许形成自对准基底触点的方法和装置
Application No.: US10778525

Application Date: 2004-02-12
Publication No.: US07229874B2

Publication Date: 2007-06-12
Inventor: Tahir Hussain , Rajesh D. Rajavel , Mary C. Montes
Applicant: Tahir Hussain , Rajesh D. Rajavel , Mary C. Montes
Applicant Address: US CA Malibu
Assignee: HRL Laboratories, LLC
Current Assignee: HRL Laboratories, LLC
Current Assignee Address: US CA Malibu
Agency: Ladas & Parry
Main IPC: H01L21/8249
IPC: H01L21/8249 ; H01L21/336 ; H01L21/331

Method and apparatus for allowing formation of self-aligned base contacts

Abstract:

A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.

Abstract(Chinese):

不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

Public/Granted literature

US20050029625A1 Method and apparatus for allowing formation of self-aligned base contacts Public/Granted day:2005-02-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8248	......双极和场效应工艺的结合
H01L21/8249	.......双极和MOS工艺