发明授权
US07229890B2 Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
失效
使用选择性沉积接入氯和氢化物气体的未掺杂硅膜形成集成电路
- 专利标题： Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
- 专利标题（中）： 使用选择性沉积接入氯和氢化物气体的未掺杂硅膜形成集成电路
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申请号： US10368069申请日： 2003-02-18
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公开(公告)号： US07229890B2公开(公告)日： 2007-06-12
- 发明人: Randhir P. S. Thakur , James Pan
- 申请人： Randhir P. S. Thakur , James Pan
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.
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