Invention Grant
US07229890B2 Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
失效
使用选择性沉积接入氯和氢化物气体的未掺杂硅膜形成集成电路
- Patent Title: Forming integrated circuits using selective deposition of undoped silicon film seeded in chlorine and hydride gas
- Patent Title (中): 使用选择性沉积接入氯和氢化物气体的未掺杂硅膜形成集成电路
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Application No.: US10368069Application Date: 2003-02-18
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Publication No.: US07229890B2Publication Date: 2007-06-12
- Inventor: Randhir P. S. Thakur , James Pan
- Applicant: Randhir P. S. Thakur , James Pan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg, Woessner & Kluth, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.
Public/Granted literature
- US20030153142A1 Selective deposition of undoped silicon film seeded in chlorine and hydride gas for a stacked capacitor Public/Granted day:2003-08-14
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