发明授权
US07229922B2 Method for making a semiconductor device having increased conductive material reliability
有权
制造具有增加的导电材料可靠性的半导体器件的方法
- 专利标题： Method for making a semiconductor device having increased conductive material reliability
- 专利标题（中）： 制造具有增加的导电材料可靠性的半导体器件的方法
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申请号： US10695249申请日： 2003-10-27
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公开(公告)号： US07229922B2公开(公告)日： 2007-06-12
- 发明人: Valery M. Dubin , Ramanan V. Chebiam
- 申请人： Valery M. Dubin , Ramanan V. Chebiam
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method and apparatus for a semiconductor device having a semiconductor device having increased conductive material reliability is described. That method and apparatus comprises forming a conductive path on a substrate. The conductive path made of a first material. A second material is then deposited on the conductive path. Once the second material is deposited on the conductive path, the diffusion of the second material into the conductive path is facilitated. The second material has a predetermined solubility to substantially diffuse to grain boundaries within the first material.
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