发明授权
- 专利标题： Semiconductor device and method of forming a semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10400541申请日： 2003-03-28
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公开(公告)号： US07230314B2公开(公告)日： 2007-06-12
- 发明人: Florin Udrea , Gehan A. J. Amaratunga
- 申请人： Florin Udrea , Gehan A. J. Amaratunga
- 申请人地址： GB Cambridge
- 专利权人： Cambridge Semiconductor Limited
- 当前专利权人： Cambridge Semiconductor Limited
- 当前专利权人地址： GB Cambridge
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A semiconductor device having an active region is formed in a layer provided on a semiconductor substrate. At least a portion of the semiconductor substrate below at least a portion of the active region is removed such that the portion of the active region is provided in a membrane defined by that portion of the layer below which the semiconductor substrate has been removed. A heat conducting and electrically insulating layer is applied to the bottom surface of the membrane. The heat conducting and electrically insulating layer has a thermal conductivity that is higher than the thermal conductivity of the membrane so that the heat conducting and electrically insulating layer allows heat to pass from the active region into the heat conducting and electrically insulating layer during normal operation of the device.
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