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公开(公告)号：US07531993B2
公开(公告)日：2009-05-12
申请号：US11847234
申请日：2007-08-29
CPC分类号： H03K17/567 , H01L29/0638 , H01L29/7393 , H03K17/08142 , H03K17/6871 , H03K2017/6878
摘要： A half bridge circuit has a first switch having at least one control gate and a second switch having at least two control gates. A first driver has an output connected to a control gate of the first switch. A second driver has an output connected to a first control gate of the second switch. The output of the first driver is connected to a second control gate of the second switch by a circuit arrangement such that when the first driver is operated to apply a high, positive voltage to the control gate of the first switch, a positive voltage is applied to the second control gate of the second switch, and such that when the first driver is operated to apply a low, zero or small voltage to the control gate of the first switch, a negative voltage is applied to said second control gate of the second switch.
摘要翻译： 半桥电路具有具有至少一个控制栅极的第一开关和具有至少两个控制栅极的第二开关。 第一驱动器具有连接到第一开关的控制栅极的输出端。 第二驱动器具有连接到第二开关的第一控制栅极的输出。 第一驱动器的输出通过电路装置连接到第二开关的第二控制栅极，使得当第一驱动器被操作以向第一开关的控制栅极施加高正正电压时，施加正电压 并且使得当第一驱动器被操作以向第一开关的控制栅极施加低，零或小电压时，负电压被施加到第二开关的第二控制栅极的第二控制栅极 开关。
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公开(公告)号：US07411272B2
公开(公告)日：2008-08-12
申请号：US11174605
申请日：2005-07-06
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L21/76289 , H01L21/764 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0661 , H01L29/0696 , H01L29/083 , H01L29/1608 , H01L29/2003 , H01L29/42368 , H01L29/66325 , H01L29/66333 , H01L29/66348 , H01L29/7393 , H01L29/7394 , H01L29/7395 , H01L29/7397 , H01L29/7801 , H01L29/7802 , H01L29/7812 , H01L29/7813 , H01L29/7824 , H01L29/7831 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.
摘要翻译： 功率半导体器件具有包括漂移区域的有源区域。 漂移区域的至少一部分设置在具有相对的顶表面和底表面的膜中。 在一个实施例中，膜的顶表面具有直接或间接连接到其上的电端子，以允许跨越漂移区横向施加电压。 在另一个实施例中，至少一个电端子直接或间接地连接到顶表面，并且至少一个电端子直接或间接地连接到底表面，以允许垂直地跨越漂移区域施加电压。 在这些实施例的每一个中，膜的底表面不具有与其相邻定位的半导体衬底。
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公开(公告)号：US06927102B2
公开(公告)日：2005-08-09
申请号：US10694736
申请日：2003-10-29
IPC分类号： H01L21/329 , H01L21/331 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/32 , H01L29/423 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/861 , H01L21/332
CPC分类号： H01L29/7816 , H01L21/76289 , H01L21/764 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0661 , H01L29/0696 , H01L29/083 , H01L29/1608 , H01L29/2003 , H01L29/42368 , H01L29/66325 , H01L29/66333 , H01L29/66348 , H01L29/7393 , H01L29/7394 , H01L29/7395 , H01L29/7397 , H01L29/7801 , H01L29/7802 , H01L29/7812 , H01L29/7813 , H01L29/7824 , H01L29/7831 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.
摘要翻译： 功率半导体器件具有包括漂移区域的有源区域。 漂移区域的至少一部分设置在具有相对的顶表面和底表面的膜中。 在一个实施例中，膜的顶表面具有直接或间接连接到其上的电端子，以允许跨越漂移区横向施加电压。 在另一个实施例中，至少一个电端子直接或间接地连接到顶表面，并且至少一个电端子直接或间接地连接到底表面，以允许垂直地跨越漂移区域施加电压。 在这些实施例的每一个中，膜的底表面不具有与其相邻定位的半导体衬底。
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公开(公告)号：US07230314B2
公开(公告)日：2007-06-12
申请号：US10400541
申请日：2003-03-28
IPC分类号： H01L21/00
CPC分类号： H01L23/3735 , H01L21/84 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： A semiconductor device having an active region is formed in a layer provided on a semiconductor substrate. At least a portion of the semiconductor substrate below at least a portion of the active region is removed such that the portion of the active region is provided in a membrane defined by that portion of the layer below which the semiconductor substrate has been removed. A heat conducting and electrically insulating layer is applied to the bottom surface of the membrane. The heat conducting and electrically insulating layer has a thermal conductivity that is higher than the thermal conductivity of the membrane so that the heat conducting and electrically insulating layer allows heat to pass from the active region into the heat conducting and electrically insulating layer during normal operation of the device.
摘要翻译： 具有有源区的半导体器件形成在设置在半导体衬底上的层中。 移除至少部分有源区的半导体衬底的至少一部分，使得有源区的一部分设置在由半导体衬底已被去除的层的该部分限定的膜中。 将导热和电绝缘层施加到膜的底表面。 导热和电绝缘层的导热率高于膜的热导率，使得导热和电绝缘层在正常操作期间允许热量从有源区域传导到导热和电绝缘层中 装置。
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公开(公告)号：US6091107A
公开(公告)日：2000-07-18
申请号：US9230
申请日：1998-01-20
IPC分类号： H01L29/74 , H01L29/739 , H01L29/749 , H01L29/78 , H01L29/76
CPC分类号： H01L29/7396 , H01L29/7397
摘要： An Insulated Gate Bipolar Transistor has a gate in the form of a trench positioned in a p region in a silicon body. The device operates in a thyristor mode having a virtual emitter which is formed during operation by the generation of an inversion layer at the bottom of the trench within the p region. The device is inherently safe and turns off rapidly as removal of a gate signal collapses the emitter. As the trench gate is situated within the p region, it can withstand high voltages when turned off as the reverse electric field is prevented from reaching the trench gate.
摘要翻译： 绝缘栅双极晶体管具有位于硅体中的p区域中的沟槽形式的栅极。 器件工作在具有虚拟发射极的晶闸管模式中，该虚拟发射极在工作期间通过在p区内的沟槽的底部产生反转层而形成。 该器件本质上是安全的，并且随着栅极信号的去除使发射极收缩而迅速关闭。 当沟槽栅极位于p区内时，当反向电场防止到达沟槽栅极时，它可以承受高电压。
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6.发明授权Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation 失效具有第一和第二绝缘门控的双极高压/功率半导体器件和操作方法公开(公告)号：US07605446B2
公开(公告)日：2009-10-20
申请号：US11486377
申请日：2006-07-14
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L23/58
CPC分类号： H01L29/7393 , H01L29/0657 , H01L29/0696 , H01L29/4232 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A first insulated gate terminal and a second insulated gate terminal are also provided. One or more drive circuits provide appropriate voltages to the first and second insulated gate terminals so as to allow current conduction in a first direction or in a second direction that is opposite the first direction.
摘要翻译： 双极高压/功率半导体器件具有分别具有与其不同导电类型的端部区域相邻的漂移区域。 提供高低压端子。 还提供了第一绝缘栅极端子和第二绝缘栅极端子。 一个或多个驱动电路为第一和第二绝缘栅极端子提供适当的电压，以允许在与第一方向相反的第一方向或第二方向上的电流传导。
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公开(公告)号：US06900518B2
公开(公告)日：2005-05-31
申请号：US10694735
申请日：2003-10-29
IPC分类号： H01L21/329 , H01L21/331 , H01L21/336 , H01L21/76 , H01L21/762 , H01L21/764 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L29/06 , H01L29/08 , H01L29/12 , H01L29/20 , H01L29/24 , H01L29/32 , H01L29/423 , H01L29/739 , H01L29/78 , H01L29/786 , H01L29/861 , H01L29/00 , H01L23/58
CPC分类号： H01L29/7816 , H01L21/76289 , H01L21/764 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0661 , H01L29/0696 , H01L29/083 , H01L29/1608 , H01L29/2003 , H01L29/42368 , H01L29/66325 , H01L29/66333 , H01L29/66348 , H01L29/7393 , H01L29/7394 , H01L29/7395 , H01L29/7397 , H01L29/7801 , H01L29/7802 , H01L29/7812 , H01L29/7813 , H01L29/7824 , H01L29/7831 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one embodiment, the top surface of the membrane has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region. In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface and at least one electrical terminal is connected directly or indirectly to the bottom surface to allow a voltage to be applied vertically across the drift region. In each of these embodiments, the bottom surface of the membrane does not have a semiconductor substrate positioned adjacent thereto.
摘要翻译： 功率半导体器件具有包括漂移区域的有源区域。 漂移区域的至少一部分设置在具有相对的顶表面和底表面的膜中。 在一个实施例中，膜的顶表面具有直接或间接连接到其上的电端子，以允许跨越漂移区横向施加电压。 在另一个实施例中，至少一个电端子直接或间接地连接到顶表面，并且至少一个电端子直接或间接地连接到底表面，以允许垂直地跨越漂移区域施加电压。 在这些实施例的每一个中，膜的底表面不具有与其相邻定位的半导体衬底。
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公开(公告)号：US06703684B2
公开(公告)日：2004-03-09
申请号：US09957547
申请日：2001-09-21
IPC分类号： H01L2900
CPC分类号： H01L29/7816 , H01L21/76289 , H01L21/764 , H01L29/0619 , H01L29/0634 , H01L29/0657 , H01L29/0661 , H01L29/0696 , H01L29/083 , H01L29/1608 , H01L29/2003 , H01L29/42368 , H01L29/66325 , H01L29/66333 , H01L29/66348 , H01L29/7393 , H01L29/7394 , H01L29/7395 , H01L29/7397 , H01L29/7801 , H01L29/7802 , H01L29/7812 , H01L29/7813 , H01L29/7824 , H01L29/7831 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device (10) has an active region that includes a drift region (20). At least a portion of the drift region (20) is provided in a membrane (16) which has opposed top and bottom surfaces (15,17). In one embodiment, the top surface (15) of the membrane (16) has electrical terminals connected directly or indirectly thereto to allow a voltage to be applied laterally across the drift region (20). In another embodiment, at least one electrical terminal is connected directly or indirectly to the top surface (15) and at least one electrical terminal is connected directly or indirectly to the bottom surface (17) to allow a voltage to be applied vertically across the drift region (20). In each of these embodiments, the bottom surface (17) of the membrane (16) does not have a semiconductor substrate positioned adjacent thereto.
摘要翻译： 功率半导体器件（10）具有包括漂移区（20）的有源区。 漂移区域（20）的至少一部分设置在具有相对的顶表面和底表面（15,17）的膜（16）中。 在一个实施例中，膜（16）的顶表面（15）具有直接或间接连接到其上的电端子，以允许跨越漂移区域（20）横向施加电压。 在另一个实施例中，至少一个电端子直接或间接地连接到顶表面（15），并且至少一个电端子直接或间接地连接到底表面（17），以允许垂直地施加电压跨越漂移 区域（20）。 在这些实施例的每一个中，膜（16）的底表面（17）不具有与其相邻定位的半导体衬底。
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公开(公告)号：US06566240B2
公开(公告)日：2003-05-20
申请号：US09957609
申请日：2001-09-21
IPC分类号： H01L2144
CPC分类号： H01L23/3735 , H01L21/84 , H01L2924/0002 , H01L2924/10158 , H01L2924/00
摘要： A semiconductor device having an active region is formed in a layer provided on a semiconductor substrate. At least a portion of the semiconductor substrate below at least a portion of the active region is removed such that the portion of the active region is provided in a membrane defined by that portion of the layer below which the semiconductor substrate has been removed. A heat conducting and electrically insulating layer is applied to the bottom surface of the membrane. The heat conducting and electrically insulating layer has a thermal conductivity that is higher than the thermal conductivity of the membrane so that the heat conducting and electrically insulating layer allows heat to pass from the active region into the heat conducting and electrically insulating layer during normal operation of the device.
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