发明授权
- 专利标题： Power semiconductor device
- 专利标题（中）： 功率半导体器件
-
申请号： US10467344申请日： 2001-05-25
-
公开(公告)号： US07235857B2公开(公告)日： 2007-06-26
- 发明人: Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
- 申请人： Gourab Majumdar , Shinji Hatae , Akihisa Yamamoto
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 国际申请： PCT/JP01/04383 WO 20010525
- 国际公布： WO02/097888 WO 20021205
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L27/01
摘要：
A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.
公开/授权文献
- US20040070047A1 Power semiconductor device 公开/授权日：2004-04-15
信息查询
IPC分类:
