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16 条记录 (耗时 0.017 秒)

    Power semiconductor device
    2.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US07235857B2

    公开(公告)日：2007-06-26

    申请号：US10467344

    申请日：2001-05-25

    申请人： Gourab Majumdar ,  Shinji Hatae ,  Akihisa Yamamoto

    发明人： Gourab Majumdar ,  Shinji Hatae ,  Akihisa Yamamoto

    IPC分类号： H01L29/00 ,  H01L27/01

    CPC分类号： H01L29/7802 ,  H01L21/8213 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/1608

    摘要： A semiconductor device is provided in which a plurality of MOSFETs including a vertical MOSFET is formed on a substrate. The device includes a silicon carbide substrate having front and back surfaces facing each other, an isolating region formed in the substrate to extend from the front surface to the back surface of the substrate, and first and second MOSFETs formed on opposite sides of the isolating region, respectively.

    摘要翻译： 提供一种半导体器件，其中在衬底上形成包括垂直MOSFET的多个MOSFET。 该装置包括具有彼此面对的前表面和后表面的碳化硅衬底，形成在衬底中的从衬底的前表面延伸到背表面的隔离区域，以及形成在隔离区域的相对侧上的第一和第二MOSFET ， 分别。

    Overcurrent protection and masking circuitry for protection against an overcurrent condition
    3.
    发明授权
    Overcurrent protection and masking circuitry for protection against an overcurrent condition 失效
    过电流保护和屏蔽电路，以防止过电流状况

    公开(公告)号：US06842064B2

    公开(公告)日：2005-01-11

    申请号：US10652072

    申请日：2003-09-02

    申请人： Akihisa Yamamoto

    发明人： Akihisa Yamamoto

    IPC分类号： H02H7/20 ,  H02M1/00 ,  H02M1/08 ,  H03K17/082 ,  H03K17/60

    CPC分类号： H03K17/0828

    摘要： An overcurrent protection circuit (6) outputs an overcurrent protection signal (S6) based on a sense voltage (Vsense). A masking circuit (5) is configured so as to allow a masking signal (S5) to be kept set to “L” even when an input signal (IN) rises to “H” (an IGBT (1) is turned on) and an NPN bipolar transistor (23) is turned off, and allow the masking signal (S5) to be changed only after a capacitor (C12) is charged up and a voltage (V9) exceeds a reference voltage (VR). An AND gate (25) receives the masking signal (S5) at one of input terminals thereof and the overcurrent protection signal (S6) at the other of the input terminals thereof, and provides an output which is then output as an interruption control signal (SC_OUT) from a sense output terminal (P2) and is finally supplied to a gate terminal (P3) of the IGBT (1).

    摘要翻译： 过电流保护电路（6）基于感测电压（Vsense）输出过电流保护信号（S6）。 掩蔽电路（5）被配置为即使当输入信号（IN）上升到“H”（IGBT（1）导通）时，也可以将掩蔽信号（S5）保持为“L”，并且 NPN双极晶体管（23）关断，只有在电容器（C12）充电并且电压（V9）超过参考电压（VR）之后才允许屏蔽信号（S5）改变。 与门25在其一个输入端接收掩蔽信号（S5），在其输入端接收过电流保护信号（S6），并提供输出作为中断控制信号（ SC_OUT），并且最终被提供给IGBT（1）的栅极端子（P3）。

    Gate drive circuit
    5.
    发明授权
    Gate drive circuit 有权
    门驱动电路

    公开(公告)号：US08829952B2

    公开(公告)日：2014-09-09

    申请号：US13667896

    申请日：2012-11-02

    申请人： Hiroshi Sakata ,  Akihisa Yamamoto ,  Mitsutaka Hano

    发明人： Hiroshi Sakata ,  Akihisa Yamamoto ,  Mitsutaka Hano

    IPC分类号： H03K3/00

    CPC分类号： H03K17/223 ,  H03K2217/0063 ,  H03K2217/0081

    摘要： A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.

    摘要翻译： 本发明的栅极驱动电路是用于驱动绝缘栅极开关元件的栅极驱动电路，其包括用于在预定时刻向开关元件的控制端施加驱动电压的控制驱动电路和电压监视电路 用于监视作为控制驱动电路的电源电压的第一电压和负极地偏置开关元件的控制端的第二电压，并且在栅极驱动电路中，控制驱动电路至少在至少 由电压监视电路监视的第一和第二电压之一变得低于阈值。 本发明的目的是提供一种可以抑制错误ON的绝缘栅极开关元件。

    TEMPERATURE DETECTOR
    9.
    发明申请
    TEMPERATURE DETECTOR 有权
    温度探测器

    公开(公告)号：US20080071493A1

    公开(公告)日：2008-03-20

    申请号：US11624379

    申请日：2007-01-18

    申请人： Dong Wang ,  Akihisa Yamamoto

    发明人： Dong Wang ,  Akihisa Yamamoto

    IPC分类号： G01K1/00

    CPC分类号： G01K7/015 ,  H01L2924/0002 ,  H03K2017/0806 ,  Y10T307/76 ,  H01L2924/00

    摘要： A temperature detector for outputting a temperature signal comprises: a temperature sensing diode formed on the same chip as a semiconductor switching device and having a specific temperature vs. voltage characteristic, wherein the temperature detector outputs the anode potential of the temperature sensing diode as the temperature signal; a constant current circuit for supplying a current to the anode of the temperature sensing diode; and anode potential holding means for holding the anode potential of the temperature sensing diode as the temperature signal at the start of switching operation of the semiconductor switching device.

    摘要翻译： 用于输出温度信号的温度检测器包括：形成在与半导体开关器件相同的芯片上并具有特定温度对电压特性的温度感测二极管，其中温度检测器输出温度感测二极管的阳极电位作为温度 信号; 用于向温度感测二极管的阳极提供电流的恒流电路; 以及阳极电位保持装置，用于在半导体开关器件的开关操作开始时保持温度感测二极管的阳极电位作为温度信号。

    Inverter device
    10.
    发明授权
    Inverter device 有权
    变频器

    公开(公告)号：US06459598B1

    公开(公告)日：2002-10-01

    申请号：US09958270

    申请日：2001-10-09

    申请人： Akihisa Yamamoto ,  Kazuaki Hiyama ,  Shinji Hatae

    发明人： Akihisa Yamamoto ,  Kazuaki Hiyama ,  Shinji Hatae

    IPC分类号： H02M7122

    CPC分类号： H02M7/53871 ,  H02M1/32 ,  H02M7/538

    摘要： An inverter apparatus includes an inverter circuit for driving a load. This inverter circuit has at least a pair of switching elements connected in series in a forward direction between both polarity terminals of a dc supply for supplying power to a load. An inverter drive circuit is employed for driving each switching element of the inverter circuit and has at least one high withstand voltage IC wherein the signal level reference potential is different in the input signal and the output signal. A clamping circuit clamps the potential of the low voltage side reference terminal, to which a potential, that is a reference for operation of the high withstand voltage IC in the inverter drive circuit and is a reference for a signal on the low potential side of the high withstand voltage IC, is applied. The voltage is clamped to the high voltage reference terminal to which is applied a reference potential for the high potential-side signal in the high withstand voltage IC. The inverter apparatus also includes a voltage dividing circuit for voltage dividing a voltage between the low voltage side reference terminal of the high withstand voltage IC in the inverter drive circuit and the negative electrode of the dc supply.

    摘要翻译： 逆变器装置包括用于驱动负载的逆变器电路。 该逆变器电路具有至少一对在用于向负载供电的直流电源的两极端子之间沿正向串联连接的开关元件。 逆变器驱动电路用于驱动逆变器电路的每个开关元件，并且具有至少一个高耐压IC，其中信号电平参考电位在输入信号和输出信号中不同。 钳位电路钳位作为逆变器驱动电路中的高耐压IC的操作的基准的低电压侧基准端子的电位，并且是用于在低电压侧基准端子的低电位侧的信号的基准 高耐压IC。 电压钳位在高电压基准端子上，在高电压基准端子上施加高耐压IC中高电位侧信号的参考电位。 逆变器装置还包括分压电路，用于对逆变器驱动电路中的高耐受电压IC的低压侧基准端与直流电源的负极之间的电压进行分压。