发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US10403122申请日: 2003-04-01
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公开(公告)号: US07238576B2公开(公告)日: 2007-07-03
- 发明人: Masakazu Yamaguchi , Ichiro Omura , Wataru Saito , Takashi Shinohe , Hiromichi Ohashi
- 申请人: Masakazu Yamaguchi , Ichiro Omura , Wataru Saito , Takashi Shinohe , Hiromichi Ohashi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-099217 20020401
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A semiconductor device comprises a drain layer of first conductivity type, drift layers of first and second conductivity types on the drain layer, an insulating film between the drift layers and contacting the drift layers, a first base layer of second conductivity type on a surface of the drift layer of first conductivity type, a source layer of first conductivity type selectively provided on a surface of the first base layer of second conductivity type, a gate insulating film on the first base layer of second conductivity type between the source layer and the drift layer, a gate electrode on the gate insulating film, a second base layer of second conductivity type on a surface of the drift layer, a first main electrode on the drain layer, and a second main electrode on the source layer, the first base layer and the second base layer.