Invention Grant
- Patent Title: Nonvolatile memory device and method of improving programming characteristic
- Patent Title (中): 非易失性存储器件和改进编程特性的方法
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Application No.: US11133286Application Date: 2005-05-20
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Publication No.: US07239554B2Publication Date: 2007-07-03
- Inventor: Jae-yong Jeong
- Applicant: Jae-yong Jeong
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2004-0084480 20041021
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06 ; G11C7/06 ; G11C5/14 ; G11C7/02
Abstract:
A method of programming a non-volatile memory device includes activating a first pump to generate a bitline voltage, and after the bulk voltage reaches a target voltage, detecting whether the bitline voltage is less than a detection voltage. When the bitline voltage is less than the detection voltage, a second pump becomes active.
Public/Granted literature
- US20060087889A1 Nonvolatile memory device and method of improving programming characteristic Public/Granted day:2006-04-27
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