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发明授权
US07242025B2 Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface 有权
在其表面具有氮化物化合物半导体主体和接触金属化层的辐射发射半导体部件

Radiation emitting semiconductor component having a nitride compound semiconductor body and a contact metallization layer on its surface
摘要：
A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.
摘要（中）：

辐射发射半导体部件具有包含氮化物化合物半导体的半导体主体和设置在半导体本体的表面上的接触金属化层。 在这种情况下，接触金属化层被辐射透射的导电接触层覆盖。 产生的辐射通过接触金属化层或通过接触金属化层中的开口耦合出来。

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