发明授权
- 专利标题： Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
- 专利标题（中）： 对称非侵入和隐蔽技术使晶体管永久不可操作
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申请号： US10881286申请日： 2004-06-29
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公开(公告)号： US07242063B1公开(公告)日： 2007-07-10
- 发明人: Lap-Wai Chow , William M. Clark, Jr. , Gavin J. Harbison , Paul Ou Yang
- 申请人： Lap-Wai Chow , William M. Clark, Jr. , Gavin J. Harbison , Paul Ou Yang
- 申请人地址： US CA Mailbu
- 专利权人： HRL Laboratories, LLC
- 当前专利权人： HRL Laboratories, LLC
- 当前专利权人地址： US CA Mailbu
- 代理机构： Ladas & Parry
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L27/088
摘要：
A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.
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