发明授权
- 专利标题： Nonvolatile memory device and method of programming same
- 专利标题（中）： 非易失性存储器件及其编程方法
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申请号： US11106640申请日： 2005-04-15
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公开(公告)号： US07245537B2公开(公告)日： 2007-07-17
- 发明人: Jae-Yong Jeong
- 申请人： Jae-Yong Jeong
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2004-0085748 20041026
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A nonvolatile memory device and method of programming the device are disclosed. The nonvolatile memory device is adapted to interrupt or resume a programming operation for a memory cell of the device in response to variation in a programming voltage being supplied to the memory cell. The programming operation is typically interrupted or resumed in response to signals generated by a program controller and/or a detector monitoring the programming voltage.
公开/授权文献
- US20060087888A1 Nonvolatile memory device and method of programming same 公开/授权日：2006-04-27
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