Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier

Invention Grant

US07247554B2 Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier 失效

Title translation: 使用钌及其氧化物作为Cu扩散阻挡层的集成电路的制造方法

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Patent Title: Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier
Patent Title (中): 使用钌及其氧化物作为Cu扩散阻挡层的集成电路的制造方法
Application No.: US10600039

Application Date: 2003-06-20
Publication No.: US07247554B2

Publication Date: 2007-07-24
Inventor: Oliver Chyan , Thomas Ponnuswamy
Applicant: Oliver Chyan , Thomas Ponnuswamy
Applicant Address: US TX Denton
Assignee: University of North Texas
Current Assignee: University of North Texas
Current Assignee Address: US TX Denton
Agency: Jackson Walker L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of making integrated circuits using ruthenium and its oxides as a Cu diffusion barrier

Abstract:

The present invention generally relates to methods used for fabricating integrated circuits (“ICs”), using Ruthenium (“Ru”) and its oxides and/or Iridium (“Ir”) and its oxides as the diffusion barrier to contain and control copper (“Cu”) interconnects. The invention also covers ICs incorporating such materials in the diffusion barrier to contain and control the Cu interconnects. The present invention advantageously provides better integration and fabrication of advanced IC chips with sub-micron features.

Abstract(Chinese):

本发明一般涉及使用钌（“Ru”）及其氧化物和/或铱（“Ir”）及其氧化物作为扩散屏障来制备集成电路（“IC”）的方法，以包含和控制铜（ “Cu”）互连。本发明还包括将这种材料结合在扩散阻挡层中以包含和控制Cu互连的IC。本发明有利地提供具有亚微米特征的先进IC芯片的更好的集成和制造。

Public/Granted literature

US20040051117A1 Method of using materials based on Ruthenium and Iridium and their oxides, as a Cu diffusion barrier, and integrated circuits incorporating same Public/Granted day:2004-03-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）