Invention Grant
- Patent Title: Process for forming tapered trenches in a dielectric material
- Patent Title (中): 在电介质材料中形成锥形沟槽的工艺
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Application No.: US11018213Application Date: 2004-12-20
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Publication No.: US07247573B2Publication Date: 2007-07-24
- Inventor: Alessandro Spandre
- Applicant: Alessandro Spandre
- Applicant Address: IT Agrate Brianza US ID Boise
- Assignee: STMicroelectronics S.r.l.,OVONYX, Inc.
- Current Assignee: STMicroelectronics S.r.l.,OVONYX, Inc.
- Current Assignee Address: IT Agrate Brianza US ID Boise
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Hai Han
- Priority: EP03425827 20031229
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A process for forming a tapered trench in a dielectric material includes the steps of forming a dielectric layer on a semiconductor wafer, and plasma etching the dielectric layer; during the plasma etch, the dielectric layer is chemically and physically etched simultaneously.
Public/Granted literature
- US20050142863A1 Process for forming tapered trenches in a dielectric material Public/Granted day:2005-06-30
Information query
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