发明授权
- 专利标题： Electron beam apparatus and method of manufacturing semiconductor device using the apparatus
- 专利标题（中）： 电子束装置及使用该装置制造半导体器件的方法
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申请号： US10445826申请日： 2003-05-28
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公开(公告)号： US07247848B2公开(公告)日： 2007-07-24
- 发明人: Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
- 申请人： Mamoru Nakasuji , Tohru Satake , Kenji Watanabe , Takeshi Murakami , Nobuharu Noji , Hirosi Sobukawa , Tsutomu Karimata , Shoji Yoshikawa , Toshifumi Kimba , Shin Oowada , Mutsumi Saito , Muneki Hamashima , Toru Takagi , Naoto Kihara , Hiroshi Nishimura
- 申请人地址： JP Tokyo
- 专利权人： Ebara Corporation
- 当前专利权人： Ebara Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2000/335833 20001102; JP2000/336305 20001102; JP2000/337370 20001106; JP2000/337491 20001106; JP2000/350935 20001117; JP2000/352720 20001120; JP2000/353831 20001121; JP2000/355294 20001122; JP2000/362752 20001129; JP2000/364556 20001130; JP2001/5140 20010112; JP2001/31901 20010208; JP2001/31906 20010208; JP2001/33599 20010209; JP2001/106656 20010405; JP2001/134981 20010502; JP2001/158571 20010528
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G01N23/00 ; H01J37/153
摘要：
The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.
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