发明授权
- 专利标题： Semiconductor device, photoelectric conversion device and method of manufacturing same
- 专利标题（中）： 半导体器件，光电转换器件及其制造方法
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申请号： US10937382申请日： 2004-09-10
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公开(公告)号： US07247899B2公开(公告)日： 2007-07-24
- 发明人: Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
- 申请人： Hideshi Kuwabara , Hiroshi Yuzurihara , Takayuki Kimura , Mahito Shinohara
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2003-321533 20030912
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113
摘要：
In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.
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