公开(公告)号：US08546902B2

公开(公告)日：2013-10-01

申请号：US12779471

申请日：2010-05-13

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US07709780B2

公开(公告)日：2010-05-04

申请号：US12111342

申请日：2008-04-29

申请人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

发明人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

IPC分类号： H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462

摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.

摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。

公开(公告)号：US20100096676A1

公开(公告)日：2010-04-22

申请号：US12642094

申请日：2009-12-18

申请人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

发明人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

IPC分类号： H01L31/112

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

公开(公告)号：US20090130782A1

公开(公告)日：2009-05-21

申请号：US12266725

申请日：2008-11-07

申请人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

发明人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for manufacturing a semiconductor device that includes a multilayer wiring structure in which insulating layers and wiring layers each with a plurality of conductor lines are alternately stacked on each other. The method includes steps of forming a first wiring layer on a first insulating layer, detecting a defect in the first wiring layer on the first insulating layer, and determining whether or not the defect is to be irradiated with a focused ion beam, according to a detection result. If it is determined that the defect is to be irradiated, the defect is irradiated with a focused ion beam and then a second insulating layer is formed on the first wiring layer disposed on the first insulating layer. If it is determined that the defect is not to be irradiated with a focused ion beam, the second insulating layer is formed on the first wiring layer disposed on the first insulating layer without irradiating the defect.

摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件包括多层布线结构，其中每个具有多条导体线的绝缘层和布线层彼此交替堆叠。 该方法包括以下步骤：在第一绝缘层上形成第一布线层，检测第一绝缘层上的第一布线层中的缺陷，以及确定是否要用聚焦离子束照射缺陷，根据 检测结果。 如果确定要照射缺陷，则用聚焦离子束照射缺陷，然后在布置在第一绝缘层上的第一布线层上形成第二绝缘层。 如果确定不用聚焦离子束照射缺陷，则在不照射缺陷的情况下，在布置在第一绝缘层上的第一布线层上形成第二绝缘层。

公开(公告)号：US20080203450A1

公开(公告)日：2008-08-28

申请号：US12026623

申请日：2008-02-06

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/00

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US20080073737A1

公开(公告)日：2008-03-27

申请号：US11941675

申请日：2007-11-16

申请人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

发明人： Hiroshi YUZURIHARA ,  Ryuichi MISHIMA ,  Takanori WATANABE ,  Takeshi ICHIKAWA ,  Seiichi TAMURA

IPC分类号： H01L31/0232 ,  H01L31/103 ,  H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区域满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C2

公开(公告)号：US07342269B1

公开(公告)日：2008-03-11

申请号：US09633175

申请日：2000-08-04

申请人： Hiroshi Yuzurihara

发明人： Hiroshi Yuzurihara

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643

摘要： In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate, a semiconductor compound layer of a high-melting point metal is provided on the source and drain and a gate electrode of an MOS transistor that forms the peripheral circuit section, and the top surface of a semiconductor diffusion layer that serves as a light-receiving part of the photoelectric conversion section is in contact with an insulating layer.

摘要翻译： 在包括光电转换部分和外围电路部分的光电转换装置中，其中处理从光电转换部分发送的信号的两个部分设置在相同的半导体衬底上，高熔点金属的半导体化合物层是 设置在源极和漏极以及形成外围电路部分的MOS晶体管的栅极电极，并且用作光电转换部分的光接收部分的半导体扩散层的顶表面与绝缘层接触 。

公开(公告)号：US20070018080A1

公开(公告)日：2007-01-25

申请号：US11527485

申请日：2006-09-27

申请人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

发明人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

IPC分类号： H01J40/14 ,  H01L31/00

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462

摘要： A photoelectric conversion device has pixels arranged in an array. Each pixel includes a light receiving region for converting light to signal charges and an insulation film formed on a surface of the light receiving region. Each pixel further includes transistors, including an amplifying transistor for amplifying the signal charges. A reflection prevention film is provided that has a refractive index higher than that of the insulation film and is arranged above the light receiving region, with the insulation film disposed between the reflection prevention film and the light receiving region. Film thicknesses of the insulation film and gate insulation films of the transistors are different from each other.

摘要翻译： 光电转换装置具有排列成阵列的像素。 每个像素包括用于将光转换为信号电荷的光接收区域和形成在光接收区域的表面上的绝缘膜。 每个像素还包括晶体管，其包括用于放大信号电荷的放大晶体管。 提供了具有比绝缘膜高的折射率的反射防止膜，并且设置在光接收区域的上方，绝缘膜设置在防反射膜和受光区之间。 晶体管的绝缘膜和栅极绝缘膜的膜厚度彼此不同。

公开(公告)号：US20060172450A1

公开(公告)日：2006-08-03

申请号：US11275672

申请日：2006-01-24

申请人： Koichi Tazoe ,  Sakae Hashimoto ,  Akira Ohtani ,  Hiroshi Yuzurihara

发明人： Koichi Tazoe ,  Sakae Hashimoto ,  Akira Ohtani ,  Hiroshi Yuzurihara

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14689

摘要： In an image pickup device, a step of forming an embedded plug includes a step of forming a connecting hole in the insulation film in which the embedded plug is to be formed, a metal layer deposition step of depositing a metal layer on the insulation film in which the connecting hole is formed, thereby covering an interior of the connecting hole and at least a part of an upper surface of the insulation film in a laminating direction thereof, and a metal layer removing step of polishing the upper surface of the insulation film on which the metal layer is deposited thereby removing the metal layer except for the interior of the connecting hole, an etch-back method performed on the embedded plug in at least an insulation film, and a chemical mechanical polishing method performed on the embedded plug in another insulation film.

摘要翻译： 在图像拾取装置中，形成嵌入式插头的步骤包括在要形成嵌入式插头的绝缘膜中形成连接孔的步骤，在绝缘膜上沉积金属层的金属层沉积步骤 所述连接孔形成，从而覆盖所述连接孔的内部和所述绝缘膜的层叠方向的上表面的至少一部分，以及金属层除去工序，对所述绝缘膜的上表面进行研磨 其中沉积金属层，从而除去连接孔内部的金属层，在至少绝缘膜上对嵌入式插塞执行的回蚀方法以及在嵌入式插头上执行的化学机械抛光方法 绝缘膜。

公开(公告)号：US20060141655A1

公开(公告)日：2006-06-29

申请号：US11318930

申请日：2005-12-28

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中主平面具有偏角，每个角度θ与至少两个垂直于基准的平面（100 ）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在垂直于主平面的方向上在0°< phi <= 45°，此外，离子注入方向的投影方向与主平面的方向在0°<α<90°的范围内与两个平面方向形成每个角度α。