Invention Grant
US07256406B2 Emitter for electron-beam projection lithography system, and method of manufacturing and operating the emitter
有权
用于电子束投影光刻系统的发射体,以及制造和操作发射极的方法
- Patent Title: Emitter for electron-beam projection lithography system, and method of manufacturing and operating the emitter
- Patent Title (中): 用于电子束投影光刻系统的发射体,以及制造和操作发射极的方法
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Application No.: US10962467Application Date: 2004-10-13
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Publication No.: US07256406B2Publication Date: 2007-08-14
- Inventor: In-kyeong Yoo , Chang-wook Moon , Chang-hoon Choi
- Applicant: In-kyeong Yoo , Chang-wook Moon , Chang-hoon Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0070990 20031013
- Main IPC: G21K5/10
- IPC: G21K5/10

Abstract:
An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.
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