发明授权
- 专利标题： Memory cell with buffered-layer
- 专利标题（中）： 带缓冲层的存储单元
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申请号： US11314222申请日： 2005-12-21
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公开(公告)号： US07256429B2公开(公告)日： 2007-08-14
- 发明人: Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
- 申请人： Sheng Teng Hsu , Tingkai Li , Fengyan Zhang , Wei Pan , Wei-Wei Zhuang , David R. Evans , Masayuki Tajiri
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Law Office of Gerald Maliszewski
- 代理商 Gerald Maliszewski
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa2Cu3O7−X (YBCO), indium oxide (In2O3), or ruthenium oxide (RuO2), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr1−XCaXMnO3 (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.
公开/授权文献
- US20060099724A1 Memory cell with buffered layer 公开/授权日：2006-05-11
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