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发明授权
US07256477B2 Notched compound semiconductor wafer 失效
缺口化合物半导体晶片

Notched compound semiconductor wafer
摘要：
There is provided a notched compound semiconductor crystal having the same specification even if it is turned over. With respect to a compound semiconductor wafer produced by slicing a compound semiconductor crystal having a crystal plane of (100) plane, the crystal is sliced so as to be tilted from the (100) plane in a direction of [101] or [10-1] when a notch is formed in a direction of [010], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [0-10] or [010] when a notch is formed in a direction of [001], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [001] or [00-1] when a notch is formed in a direction of [0-10], or the crystal is sliced so as to be tilted from the (100) plane in a direction of [010] or [0-10] when a notch is formed in a direction of [00-1].
摘要（中）：

提供了具有相同规格的缺口化合物半导体晶体，即使它被翻转。 对于通过将具有（100）面的晶面的化合物半导体晶体切片而制造的复合半导体晶片，将晶体从（100）面向[101]或[10- 1]当在[010]的方向上形成切口时，或者当在[0-10]或[010]的方向上形成在[0-10]或[010]的方向上时，晶体被切割成从（100）面倾斜 或者在[0-10]的方向上形成切口时，[001]的方向或者晶体被切割成从（100）面向[001]或[00-1]的方向倾斜， 或者当在[00-1]的方向上形成凹口时，晶体被切割成从（100）面向[010]或[0-10]的方向倾斜。

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