Invention Grant
- Patent Title: Methodology for determining electron beam penetration depth
- Patent Title (中): 确定电子束穿透深度的方法
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Application No.: US11006305Application Date: 2004-12-06
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Publication No.: US07259381B2Publication Date: 2007-08-21
- Inventor: Josephine J. Liu , Alexandros T. Demos , Hichem M'Saad
- Applicant: Josephine J. Liu , Alexandros T. Demos , Hichem M'Saad
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: G21K5/10
- IPC: G21K5/10
Abstract:
The Grunn equation: Depth = 0.046 ( V acc ) n ρ is modified to accurately predict depth of electron beam penetration into a target material. A two-layer stack is formed comprising a thickness of the target material overlying a detection material exhibiting greater sensitivity to the electron beam than the target material. The target material is exposed to electron beam radiation of different energies, with the threshold energy resulting in a changed physical property of the detection material below a predetermined value marking a penetration depth corresponding to the target material thickness. Utilizing the threshold energy (Vacc), the target material thickness (Depth), and the known target material density (ρ), the numerical power “n” of the Grunn equation is calculated to fit experimental results. So modified, the Grunn equation accurately predicts the depth of penetration of electron beams of varying energies into the target material.
Public/Granted literature
- US20060027764A1 Methodology for determining electron beam penetration depth Public/Granted day:2006-02-09
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