Invention Grant
- Patent Title: Integrated circuit yield enhancement using Voronoi diagrams
- Patent Title (中): 使用Voronoi图的集成电路产量增强
-
Application No.: US10709292Application Date: 2004-04-27
-
Publication No.: US07260790B2Publication Date: 2007-08-21
- Inventor: Robert J. Allen , Michael S. Gray , Jason D. Hibbeler , Mervyn Yee-Min Tan , Robert F. Walker
- Applicant: Robert J. Allen , Michael S. Gray , Jason D. Hibbeler , Mervyn Yee-Min Tan , Robert F. Walker
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Gibb & Rahman, LLC
- Agent Richard Kotulak, Esq.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method of calculating critical area in an integrated circuit design, said method comprising: inputting an integrated circuit design; associating variables with the positions of edges in said integrated circuit design; and associating cost functions of said variables with spacing between said edges in said integrated circuit design; wherein said cost functions calculate critical area contributions as the positions and length of said edges in said integrated circuit design change, and wherein said critical area contributions comprise a measure of electrical fault characteristics of said spacing between said edges in said integrated circuit design.
Public/Granted literature
- US20060150130A1 INTEGRATED CIRCUIT YIELD ENHANCEMENT USING VORONOI DIAGRAMS Public/Granted day:2006-07-06
Information query