发明授权
- 专利标题： Silicon carbide and other films and method of deposition
- 专利标题（中）： 碳化硅等薄膜及沉积方法
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申请号： US10716006申请日： 2003-11-18
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公开(公告)号： US07261919B2公开(公告)日： 2007-08-28
- 发明人: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
- 申请人： Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
- 申请人地址： US OH Cleveland
- 专利权人： FLX Micro, Inc.
- 当前专利权人： FLX Micro, Inc.
- 当前专利权人地址： US OH Cleveland
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
公开/授权文献
- US20050106320A1 Silicon carbide and other films and method of deposition 公开/授权日：2005-05-19
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