发明授权
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US10754545申请日: 2004-01-12
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公开(公告)号: US07262083B2公开(公告)日: 2007-08-28
- 发明人: Shinji Tojo , Shinya Kanamitsu , Seiichi Ichihara
- 申请人: Shinji Tojo , Shinya Kanamitsu , Seiichi Ichihara
- 申请人地址: JP Tokyo JP Tokyo
- 专利权人: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人: Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Tokyo
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2001-311540 20011009
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate with each other is taken into account and a correction is made beforehand to the pitch of the inner leads. Likewise, a change in lead pitch which occurs at the time of connecting electrodes on a liquid crystal substrate and outer leads on the film substrate with each other is taken into account and a correction is made beforehand to the pitch of the outer leads.
公开/授权文献
- US20040142512A1 Method of manufacturing a semiconductor device 公开/授权日:2004-07-22
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