- 专利标题: Dual stressed SOI substrates
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申请号: US10905062申请日: 2004-12-14
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公开(公告)号: US07262087B2公开(公告)日: 2007-08-28
- 发明人: Dureseti Chidambarrao , Bruce B. Doris , Oleg Gluschenkov , Omer H. Dokumaci , Huilong Zhu
- 申请人: Dureseti Chidambarrao , Bruce B. Doris , Oleg Gluschenkov , Omer H. Dokumaci , Huilong Zhu
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate; a first layered stack atop the substrate, the first layered stack comprising a compressive dielectric layer atop the substrate and a first semiconducting layer atop the compressive dielectric layer, wherein the compressive dielectric layer transfers tensile stresses to the first semiconducting layer; and a second layered stack atop the substrate, the second layered stack comprising an tensile dielectric layer atop the substrate and a second semiconducting layer atop the tensile dielectric layer, wherein the tensile dielectric layer transfers compressive stresses to the second semiconducting layer. The tensile dielectric layer and the compressive dielectric layer preferably comprise nitride, such as Si3N4.
公开/授权文献
- US20060125008A1 DUAL STRESSED SOI SUBSTRATES 公开/授权日:2006-06-15