Invention Grant
- Patent Title: Semiconductor constructions
- Patent Title (中): 半导体结构
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Application No.: US11026822Application Date: 2004-12-29
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Publication No.: US07262503B2Publication Date: 2007-08-28
- Inventor: Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
- Applicant: Werner Juengling , Kirk D. Prall , Ravi Iyer , Gurtej S. Sandhu , Guy Blalock
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.
Public/Granted literature
- US20050121794A1 Semiconductor constructions Public/Granted day:2005-06-09
Information query
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