发明授权
- 专利标题： Method of fabricating silicon on glass via layer transfer
- 专利标题（中）： 通过层转移在玻璃上制造硅的方法
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申请号： US10894685申请日： 2004-07-20
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公开(公告)号： US07265030B2公开(公告)日： 2007-09-04
- 发明人: Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
- 申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas J. Tweet , Sheng Teng Hsu
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理商 David C. Ripma
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer; bonding a glass substrate to the strained silicon layer to form a composite wafer; splitting the composite wafer to provide a split wafer; and processing the split wafer to prepare it for subsequent device fabrication.
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