发明授权
US07265376B2 Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
有权
非易失性存储单元,存储单元布置和用于生产非易失性存储单元的方法
- 专利标题: Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
- 专利标题(中): 非易失性存储单元,存储单元布置和用于生产非易失性存储单元的方法
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申请号: US10533215申请日: 2003-10-29
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公开(公告)号: US07265376B2公开(公告)日: 2007-09-04
- 发明人: Andrew Graham , Franz Hofmann , Wolfgang Hönlein , Johannes Kretz , Franz Kreupl , Erhard Landgraf , Richard Johannes Luyken , Wolfgang Rösner , Thomas Schulz , Michael Specht
- 申请人: Andrew Graham , Franz Hofmann , Wolfgang Hönlein , Johannes Kretz , Franz Kreupl , Erhard Landgraf , Richard Johannes Luyken , Wolfgang Rösner , Thomas Schulz , Michael Specht
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies, Inc.
- 当前专利权人: Infineon Technologies, Inc.
- 当前专利权人地址: DE Munich
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: DE10250829 20021031
- 国际申请: PCT/DE03/03588 WO 20031029
- 国际公布: WO2004/040667 WO 20040513
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01L51/00 ; H01L29/788 ; H01L21/336
摘要:
A nonvolatile memory cell, memory cell arrangement, and method for production of a nonvolatile memory cell is disclosed. The nonvolatile memory cell includes a vertical field-effect transistor (FET). The FET contains a nanoelement arranged as a channel region and an electrically insulating layer. The electrically insulating layer at least partially surrounds the nanoelement and acts as a charge storage layer and as a gate-insulating layer. The electrically insulating layer is arranged such that electrical charge carriers may be selectively introduced into or removed from the electrically insulating layer and the electrical conductivity characteristics of the nanoelement may be influenced by the electrical charge carriers introduced into the electrically insulating layer.