发明授权
- 专利标题： Method for manufacturing pressure sensor
- 专利标题（中）： 压力传感器制造方法
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申请号： US11325514申请日： 2006-01-05
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公开(公告)号： US07268008B2公开(公告)日： 2007-09-11
- 发明人: Manabu Tomisaka , Yoshifumi Watanabe , Hiroaki Tanaka
- 申请人： Manabu Tomisaka , Yoshifumi Watanabe , Hiroaki Tanaka
- 申请人地址： JP Kariya
- 专利权人： DENSO Corporation
- 当前专利权人： DENSO Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2005-010340 20050118; JP2005-300299 20051014
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for manufacturing a pressure sensor includes the steps of: preparing a semiconductor substrate; forming an insulation film on the substrate; forming a first metal film on the insulation film; forming a first protection film on the first metal film and the insulation film; forming a second protection film on the first metal film and the first protection film; performing reduction treatment of adhesive force on the second protection film, the force between the second protection film and a second metal film; forming the second metal film on the first metal film and the first protection film; and removing a part of the second metal film.
公开/授权文献
- US20060160263A1 Method for manufacturing pressure sensor 公开/授权日：2006-07-20
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