发明授权
- 专利标题: Ferroelectric random access memory device
- 专利标题(中): 铁电随机存取存储器件
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申请号: US11046878申请日: 2005-02-01
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公开(公告)号: US07269049B2公开(公告)日: 2007-09-11
- 发明人: Hidehiro Shiga , Shinichiro Shiratake , Daisaburo Takashima
- 申请人: Hidehiro Shiga , Shinichiro Shiratake , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2004-220663 20040728
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
A plurality of ferroelectric memory cells is arrayed. One terminal of each memory cells arrayed in the same column is connected in common to a first bit line. A gate of a transistor of memory cells arrayed in the same row is connected in common to a word line. The other terminal of each of memory cells arrayed in the same column or the same row is connected in common to a cell plate line. A second bit line is connected with a reference voltage supply circuit. The first and second bit lines are connected with a data read circuit. The data read circuit includes a sense amplifier and a current mirror circuit having a pair of current input node connected to the first and second bit lines, and carrying the same current flowing through one of the first and second bit line to the other bit line.
公开/授权文献
- US20060023484A1 Ferroelectric random access memory device 公开/授权日:2006-02-02