发明授权
US07272035B1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
有权
利用自旋转移和使用这种电池的磁存储器的磁存储单元的电流驱动切换
- 专利标题： Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
- 专利标题（中）： 利用自旋转移和使用这种电池的磁存储器的磁存储单元的电流驱动切换
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申请号： US11217524申请日： 2005-08-31
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公开(公告)号： US07272035B1公开(公告)日： 2007-09-18
- 发明人: Eugene Youjun Chen , Yiming Huai
- 申请人： Eugene Youjun Chen , Yiming Huai
- 申请人地址： US CA Milpitas
- 专利权人： Grandis, Inc.
- 当前专利权人： Grandis, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Strategic Patent Group, P.C.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.
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