In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.