发明授权
US07274082B2 Chemical sensor using chemically induced electron-hole production at a schottky barrier 失效
化学传感器在肖特基势垒中使用化学诱导的电子空穴生成

Chemical sensor using chemically induced electron-hole production at a schottky barrier
摘要:
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, and molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
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