发明授权
US07274082B2 Chemical sensor using chemically induced electron-hole production at a schottky barrier
失效
化学传感器在肖特基势垒中使用化学诱导的电子空穴生成
- 专利标题: Chemical sensor using chemically induced electron-hole production at a schottky barrier
- 专利标题(中): 化学传感器在肖特基势垒中使用化学诱导的电子空穴生成
-
申请号: US11118189申请日: 2005-04-29
-
公开(公告)号: US07274082B2公开(公告)日: 2007-09-25
- 发明人: Eric W. McFarland , W. Henry Weinberg , Hermann Nienhaus , Howard S. Bergh , Brian Gergen , Arunava Mujumdar
- 申请人: Eric W. McFarland , W. Henry Weinberg , Hermann Nienhaus , Howard S. Bergh , Brian Gergen , Arunava Mujumdar
- 申请人地址: US CA Carpinteria
- 专利权人: Adrena, Inc.
- 当前专利权人: Adrena, Inc.
- 当前专利权人地址: US CA Carpinteria
- 代理商 Michael A. O'Neil
- 主分类号: H01L27/095
- IPC分类号: H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108 ; H01L21/28 ; H01L21/44
摘要:
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, and molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.
公开/授权文献
信息查询
IPC分类: