发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11012171申请日: 2004-12-16
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公开(公告)号: US07276402B2公开(公告)日: 2007-10-02
- 发明人: Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
- 申请人: Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
- 申请人地址: JP Kanagawa-ken JP Osaka
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址: JP Kanagawa-ken JP Osaka
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2003-429552 20031225
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof. A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
公开/授权文献
- US20050142702A1 Semiconductor device and manufacturing method thereof 公开/授权日:2005-06-30