利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

115 条记录 (耗时 0.03 秒)

    Thin film transistor and display device
    2.
    发明授权
    Thin film transistor and display device 有权
    薄膜晶体管和显示装置

    公开(公告)号：US09093541B2

    公开(公告)日：2015-07-28

    申请号：US14002211

    申请日：2012-02-23

    申请人： Hidehito Kitakado ,  Sumio Katoh

    发明人： Hidehito Kitakado ,  Sumio Katoh

    IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H05B37/02 ,  H01L29/45

    CPC分类号： H01L29/7869 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H05B37/02

    摘要： The invention provides a thin film transistor having current driving force that can be substantially improved. By heat treatment, the IGZO layer (45) from which oxygen is taken away by the titanium electrodes (65) becomes the low resistance regions (40b), and the IGZO layer (45) from which oxygen is not taken away remains as the high resistance region (40a). In this state, when the gate voltage is applied to the gate electrode (20), electrons in the low resistance regions (40b) near the boundaries with the high resistance region (40a) move respectively to the titanium electrode (65) sides. As a result, the length of the low resistance regions (40b) becomes short, and oppositely, the length of the high resistance region (40a) becomes longer by the size of the shortened low resistance regions. However, the electrical channel length (Le) becomes shorter than the source/drain interval space (Lch) as the limit resolution of the exposure device, and the current driving force becomes large.

    摘要翻译： 本发明提供一种薄膜晶体管，其具有可大大改善的电流驱动力。 通过热处理，由钛电极（65）夺取氧的IGZO层（45）成为低电阻区域（40b），并且不吸收氧气的IGZO层（45）保持为高 电阻区域（40a）。 在该状态下，当栅电极（20）施加栅极电压时，与高电阻区域（40a）的边界附近的低电阻区域（40b）中的电子分别移动到钛电极（65）侧。 结果，低电阻区域（40b）的长度变短，相反地，通过缩短的低电阻区域的尺寸，高电阻区域（40a）的长度变长。 然而，电通道长度（Le）比作为曝光装置的极限分辨率的源极/漏极间隔空间（Lch）短，并且电流驱动力变大。

    Semiconductor device, production method thereof, and electronic device
    6.
    发明授权
    Semiconductor device, production method thereof, and electronic device 有权
    半导体装置及其制造方法以及电子装置

    公开(公告)号：US08174053B2

    公开(公告)日：2012-05-08

    申请号：US12438394

    申请日：2007-06-04

    申请人： Hidehito Kitakado

    发明人： Hidehito Kitakado

    IPC分类号： H01L29/10

    CPC分类号： H01L29/78627 ,  H01L27/1255 ,  H01L29/78603 ,  H01L29/78621

    摘要： The present invention provides a semiconductor device which includes a thin film transistor as a resistance element, wherein a variation in resistance of the thin film transistor is suppressed without increasing an area of the resistance element and the resistance element can be produced through simplified production steps. The semiconductor device of the present invention is a semiconductor device including a first thin film transistor and a second thin film transistor on a substrate, the first thin film transistor being used as a resistance element, the second thin film transistor including a semiconductor layer having a low concentration drain region and a high concentration drain region, the low concentration drain region and the high concentration drain region being different in impurity concentration, wherein an impurity concentration of a channel region of a semiconductor layer in the first thin film transistor is the same as an impurity concentration of the low concentration drain region of the semiconductor layer in the second thin film transistor.

    摘要翻译： 本发明提供一种半导体器件，其包括作为电阻元件的薄膜晶体管，其中抑制薄膜晶体管的电阻变化而不增加电阻元件的面积，并且可以通过简化的制造步骤来制造电阻元件。 本发明的半导体器件是在衬底上包括第一薄膜晶体管和第二薄膜晶体管的半导体器件，第一薄膜晶体管用作电阻元件，第二薄膜晶体管包括具有 低浓度漏极区域和高浓度漏极区域，低浓度漏极区域和高浓度漏极区域的杂质浓度不同，其中第一薄膜晶体管中的半导体层的沟道区域的杂质浓度与 第二薄膜晶体管中的半导体层的低浓度漏极区的杂质浓度。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20120001244A1

    公开(公告)日：2012-01-05

    申请号：US13230997

    申请日：2011-09-13

    申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

    发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

    IPC分类号： H01L27/06

    CPC分类号： H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

    摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

    摘要翻译： 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20110254068A1

    公开(公告)日：2011-10-20

    申请号：US13172398

    申请日：2011-06-29

    申请人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

    发明人： Hidehito KITAKADO ,  Ritsuko KAWASAKI ,  Kenji KASAHARA

    IPC分类号： H01L27/092 ,  H01L27/06

    CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

    摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

    摘要翻译： 本发明提供了一种半导体器件，其中布置在每个电路中的底栅TFT或反向交错TFT适当地构成为与各个电路的功能一致，从而提高了半导体器件的工作效率和可靠性 。 在该结构中，像素TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的N沟道TFT中的LDD区域布置成不与沟道保护绝缘膜重叠，并且通过其至少一部分与栅电极重叠。 驱动电路的P沟道TFT中的LDD区域布置成与沟道保护绝缘膜重叠并与栅电极重叠。

    Semiconductor device and method of manufacturing therefor
    10.
    发明授权
    Semiconductor device and method of manufacturing therefor 有权
    半导体装置及其制造方法

    公开(公告)号：US08023042B2

    公开(公告)日：2011-09-20

    申请号：US10913415

    申请日：2004-08-09

    申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

    发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

    摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

    摘要翻译： 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。