发明授权
US07276930B2 Circuit and method for detecting skew of transistor in semiconductor device
失效
用于检测半导体器件中晶体管的偏斜的电路和方法
- 专利标题： Circuit and method for detecting skew of transistor in semiconductor device
- 专利标题（中）： 用于检测半导体器件中晶体管的偏斜的电路和方法
-
申请号： US11019395申请日： 2004-12-23
-
公开(公告)号： US07276930B2公开(公告)日： 2007-10-02
- 发明人: Hwang Hur , Jun-Gi Choi
- 申请人： Hwang Hur , Jun-Gi Choi
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Lowe Hauptman & Berner LLP
- 优先权： KR10-2004-0029065 20040427
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
A circuit and method for easily detecting skew of a transistor within a semiconductor device are provided. The circuit for detecting the skew of the transistor includes a linear voltage generating unit for outputting a linear voltage by using a first supply voltage, a first attenuation unit for reducing variation width of the linear voltage according to the performance of the transistor, a saturation voltage generating unit for outputting a saturation voltage by using a second supply voltage, and a comparison unit for comparing an output of the first attenuation unit and the saturation voltage.