发明授权
- 专利标题: Method of measuring overlay
- 专利标题(中): 测量覆盖层的方法
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申请号: US11153316申请日: 2005-06-16
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公开(公告)号: US07277185B2公开(公告)日: 2007-10-02
- 发明人: Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
- 申请人: Rene Monshouwer , Jacobus Hermanus Maria Neijzen , Jan Evert Van Der Werf
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 优先权: EP00204826 20001227
- 主分类号: G01B11/02
- IPC分类号: G01B11/02 ; G01B11/00
摘要:
In a method of measuring, in a lithographic manufacturing process using a lithographic projection apparatus, overlay between a resist layer, in which a mask pattern is to be imaged, and a substrate, use is made of an alignment-measuring device forming part of the apparatus and of specific overlay marks in the substrate and resist layer. These marks have periodic structures with periods which cannot be resolved by the alignment device, but generate an interference pattern having a period corresponding to the period of a reference mark of the alignment device.
公开/授权文献
- US20050231732A1 Method of measuring overlay 公开/授权日:2005-10-20