发明授权
US07279739B2 Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film
失效
在隧道绝缘膜上具有纳米点的非易失性半导体存储器件
- 专利标题： Non-volatile semiconductor memory device having nano-dots on a tunnel insulating film
- 专利标题（中）： 在隧道绝缘膜上具有纳米点的非易失性半导体存储器件
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申请号： US11354092申请日： 2006-02-15
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公开(公告)号： US07279739B2公开(公告)日： 2007-10-09
- 发明人: Yoshiharu Kanegae , Tomio Iwasaki
- 申请人： Yoshiharu Kanegae , Tomio Iwasaki
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2005-038537 20050216
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.
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