公开(公告)号：US20050051855A1

公开(公告)日：2005-03-10

申请号：US10910574

申请日：2004-08-04

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

IPC分类号： H01L21/283 ,  H01L21/28 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8247 ,  H01L23/52 ,  H01L27/04 ,  H01L27/088 ,  H01L27/115 ,  H01L29/417 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11521 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/115 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/7881

摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

摘要翻译： 半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。 栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

公开(公告)号：US07279739B2

公开(公告)日：2007-10-09

申请号：US11354092

申请日：2006-02-15

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki

IPC分类号： H01L29/788

CPC分类号： H01L23/485 ,  B82Y10/00 ,  H01L21/28273 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L2924/0002 ,  Y10S977/774 ,  H01L2924/00

摘要： There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

摘要翻译： 通过均匀地形成纳米点，提供了高可靠性的纳米点记忆。 此外，通过采用氧化硅膜替代材料作为隧道绝缘膜，提供了高速度和高可靠性的纳米点存储器。 纳米点存储器包括隧道绝缘膜和CoSi 2 N或NiSi 2 N的硅化物纳米点。 这里，隧道绝缘膜通过在硅上外延生长HfO 2 2，ZrO 2或CeO 2 2的高介电常数绝缘膜而形成 或锗衬底，或优选在硅或锗（111）衬底上。 此外，硅化物纳米点形成在隧道绝缘膜上。

公开(公告)号：US07180143B2

公开(公告)日：2007-02-20

申请号：US10910574

申请日：2004-08-04

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki ,  Hiroshi Moriya

IPC分类号： H01L29/94

CPC分类号： H01L27/11521 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/115 ,  H01L29/518 ,  H01L29/7842 ,  H01L29/7845 ,  H01L29/7881

摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

摘要翻译： 半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。 栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

公开(公告)号：US20060180852A1

公开(公告)日：2006-08-17

申请号：US11354092

申请日：2006-02-15

申请人： Yoshiharu Kanegae ,  Tomio Iwasaki

发明人： Yoshiharu Kanegae ,  Tomio Iwasaki

IPC分类号： H01L29/788

CPC分类号： H01L23/485 ,  B82Y10/00 ,  H01L21/28273 ,  H01L23/53223 ,  H01L23/53238 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42332 ,  H01L2924/0002 ,  Y10S977/774 ,  H01L2924/00

摘要： There is provided a high-reliability nano-dots memory by forming the nano dots uniformly. Also, there is provided the high-speed and high-reliability nano-dots memory by employing a silicon-oxide-film alternative material as a tunnel insulating film. The nano-dots memory includes the tunnel insulating film and silicide nano-dots of CoSi2 or NiSi2. Here, the tunnel insulating film is formed by epitaxially growing a high-permittivity insulating film of HfO2, ZrO2 or CeO2 on a silicon or germanium substrate, or preferably, on a silicon or germanium (111) substrate. Also, the silicide nano-dots are formed on the tunnel insulating film.

摘要翻译： 通过均匀地形成纳米点，提供了高可靠性的纳米点记忆。 此外，通过采用氧化硅膜替代材料作为隧道绝缘膜，提供了高速度和高可靠性的纳米点存储器。 纳米点存储器包括隧道绝缘膜和CoSi 2 N或NiSi 2 N的硅化物纳米点。 这里，通过在硅上外延生长HfO 2 2，ZrO 2或CeO 2 2的高介电常数绝缘膜来形成隧道绝缘膜 或锗衬底，或优选在硅或锗（111）衬底上。 此外，硅化物纳米点形成在隧道绝缘膜上。

公开(公告)号：US20150155563A1

公开(公告)日：2015-06-04

申请号：US14404350

申请日：2012-05-31

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： H01M4/62 ,  H01M10/0525 ,  H01M4/505 ,  H01M4/485 ,  H01M4/525

CPC分类号： H01M4/622 ,  H01M4/131 ,  H01M4/133 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/62 ,  H01M10/0525 ,  H01M2220/30

摘要： A lithium ion secondary battery includes a binder that binds an active material to a current collector in the positive electrode or negative electrodes or both. The binder contains a base material including a resin having a benzene ring, and a polyacene additive selected from the group consisting of naphthalene, anthracene, tetracene, and derivatives thereof. The active material is a carbonaceous material or a lithium-containing composite oxide having a crystal structure in which a distance between nearest oxygen atoms is 0.19 to 0.29 nm. Adhesion of the binder to the active material during the manufacturing of the lithium ion secondary battery is led to a closest-packed crystal plane in the crystal structure of the active material, so that inhibition of moving of lithium ions in and out of the active material due to the binder may be reduced.

摘要翻译： 锂离子二次电池包括将活性物质与正极或负极中的集电体结合的粘合剂或两者。 粘合剂含有包含具有苯环的树脂的基材和选自萘，蒽，并四苯及其衍生物的多并苯添加剂。 活性物质是具有晶体结构的碳质材料或含锂复合氧化物，其中最近的氧原子之间的距离为0.19〜0.29nm。 在制造锂离子二次电池期间，粘合剂对活性物质的粘附性导致活性物质的晶体结构中最接近填充的晶面，从而抑制锂离子进出活性物质的移动 由于粘合剂可能会减少。

公开(公告)号：US08866120B2

公开(公告)日：2014-10-21

申请号：US13314165

申请日：2011-12-07

申请人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

发明人： Yuichi Matsui ,  Nozomu Matsuzaki ,  Norikatsu Takaura ,  Naoki Yamamoto ,  Hideyuki Matsuoka ,  Tomio Iwasaki

IPC分类号： H01L47/00 ,  H01L45/00

CPC分类号： H01L45/06 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer.

公开(公告)号：US07846567B2

公开(公告)日：2010-12-07

申请号：US12127856

申请日：2008-05-28

申请人： Yasutaka Okura ,  Tomio Iwasaki

发明人： Yasutaka Okura ,  Tomio Iwasaki

IPC分类号： G11B5/70

CPC分类号： G11B5/855

摘要： The present invention provides a magnetic disk in a discrete track medium and a patterned medium, which prevents the loss of the magnetically recorded data when a head of a magnetic disk device contacts the magnetic disk, and a manufacturing method thereof. A magnetic disk has a protrusion as a non-magnetic member formed on a disk surface to prevent a head from being in contact with a recording section. When the protrusion formed in a disk substrate collides against the head, the protrusion 7 does not collapse, and accordingly, the recording layer is not damaged. Alternatively, concave and convex portions are formed on the substrate surface to use the convex portion as the protrusion.

摘要翻译： 本发明提供了一种分立轨道介质中的磁盘和图案化介质，其防止当磁盘装置的磁头与磁盘接触时磁记录数据的损失及其制造方法。 磁盘具有作为形成在盘表面上的非磁性构件的突起，以防止头部与记录部分接触。 当形成在盘基板上的突起与头部碰撞时，突起7不会折叠，因此记录层不被损坏。 或者，在基板表面上形成凹凸部，使用凸部作为突出部。

公开(公告)号：US07771853B2

公开(公告)日：2010-08-10

申请号：US11956424

申请日：2007-12-14

申请人： Tomio Iwasaki

发明人： Tomio Iwasaki

IPC分类号： G11B5/66

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/72 ,  G11B5/743 ,  G11B5/855

摘要： A patterned magnetic medium includes: a substrate; a soft magnetic underlying film, a nonmagnetic film, an intermediate film and a recording layer which are formed on a principal surface of the substrate; a first protective film formed in contact with the recording film; a second protective film formed in contact with the first protective film; and a third protective film formed in contact with the second protective film. Moreover, the recording layer has a pattern structure formed by making a magnetic film come into contact with a concavo-convex pattern of a nonmagnetic material. The first protective film and the third protective film include carbon as the main constituent element and the second protective film is a wet-coated polymer film. High adhesion between carbon and the wet-coated polymer film can prevent peeling off and the wet-coated polymer film as a cushioning material absorbs impact.

摘要翻译： 图案化磁介质包括：基板; 形成在基板的主表面上的软磁性底膜，非磁性膜，中间膜和记录层; 形成为与记录膜接触的第一保护膜; 形成为与第一保护膜接触的第二保护膜; 和与第二保护膜接触形成的第三保护膜。 此外，记录层具有通过使磁性膜与非磁性材料的凹凸图案接触而形成的图案结构。 第一保护膜和第三保护膜包括碳作为主要构成元素，第二保护膜是湿涂聚合物膜。 碳与湿涂层聚合物膜之间的高附着力可以防止剥离，并且作为缓冲材料的湿涂聚合物膜吸收冲击。

公开(公告)号：US07586390B2

公开(公告)日：2009-09-08

申请号：US11345538

申请日：2006-02-02

申请人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

发明人： Hisanori Matsumoto ,  Tomio Iwasaki ,  Kengo Asai ,  Nobuhiko Shibagaki

IPC分类号： H03H9/15 ,  H03H9/54 ,  H03H9/13

CPC分类号： H03H9/02086 ,  H03H9/174 ,  H03H9/175

摘要： A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness C33 is 300 GN/m2 or more.

摘要翻译： 具有优异弹性和高机电能量转换效率的体声波谐振器。 体声波谐振器包括基板，形成在基板上的下电极，形成在下电极层上的中间层，形成在中间层上的压电层，以及形成在压电层上的上电极层。 此外，在构成由中间层构成的材料的最接近的填充平面的晶格的短边缘和构成由压电层构成的材料的最接近的填充平面的晶格的短边缘之间确定的第一晶格失配 以及在构成由中间层构成的材料的最接近的填充平面的格子的长边和构成由压电体构成的材料的最接近的填充面的格子的长边缘之间确定的第二晶格失配， 为7％以下，下部电极层为弹性刚度C33的值为300Ng / m 2以上的材料。

公开(公告)号：US07537858B2

公开(公告)日：2009-05-26

申请号：US10872456

申请日：2004-06-22

申请人： Tomio Iwasaki ,  Hideo Miura

发明人： Tomio Iwasaki ,  Hideo Miura

IPC分类号： H01M4/86

CPC分类号： H01M4/926 ,  F01N3/2053 ,  F01N13/009 ,  F01N13/0093 ,  H01M4/86 ,  H01M4/8636 ,  H01M4/90 ,  H01M4/921 ,  H01M2008/1095 ,  Y02E60/324

摘要： The present invention provides a catalyst structure of high catalytic activity and a fuel cell of high cell output. The catalyst structure comprises a conductive film and catalyst particles formed on the conductive film wherein the difference between lattice constant of a material constituting the conductive film and that of a material constituting the catalyst particles is not more than 16%, and preferably not less than 3%.

摘要翻译： 本发明提供催化活性高的催化剂结构和高电池输出的燃料电池。 催化剂结构包括形成在导电膜上的导电膜和催化剂颗粒，其中构成导电膜的材料的晶格常数与构成催化剂颗粒的材料的晶格常数之间的差异不大于16％，优选不小于3 ％。