发明授权
- 专利标题: Method for making a semiconductor device with strain enhancement
- 专利标题(中): 制造具有应变增强的半导体器件的方法
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申请号: US11092291申请日: 2005-03-29
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公开(公告)号: US07282415B2公开(公告)日: 2007-10-16
- 发明人: Da Zhang , Bich-Yen Nguyen , Voon-Yew Thean , Yasuhito Shiho , Veer Dhandapani
- 申请人: Da Zhang , Bich-Yen Nguyen , Voon-Yew Thean , Yasuhito Shiho , Veer Dhandapani
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Robert L. King; Daniel D. Hill
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A semiconductor device with strain enhancement is formed by providing a semiconductor substrate and an overlying control electrode having a sidewall. An insulating layer is formed adjacent the sidewall of the control electrode. The semiconductor substrate and the control electrode are implanted to form first and second doped current electrode regions, a portion of each of the first and second doped current electrode regions being driven to underlie both the insulating layer and the control electrode in a channel region of the semiconductor device. The first and second doped current electrode regions are removed from the semiconductor substrate except for underneath the control electrode and the insulating layer to respectively form first and second trenches. An insitu doped material containing a different lattice constant relative to the semiconductor substrate is formed within the first and second trenches to function as first and second current electrodes of the semiconductor device.