Invention Grant
- Patent Title: Exposing a semiconductor wafer using two different spectral wavelengths and adjusting for chromatic aberration
- Patent Title (中): 使用两种不同的光谱波长展现半导体晶片并调整色差
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Application No.: US11116439Application Date: 2005-04-28
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Publication No.: US07286207B2Publication Date: 2007-10-23
- Inventor: Christoph Nölscher , Andreas Jahnke
- Applicant: Christoph Nölscher , Andreas Jahnke
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies, AG
- Current Assignee: Infineon Technologies, AG
- Current Assignee Address: DE Neubiberg
- Agency: Edell, Shapiro & Finnan LLC
- Main IPC: G03B27/68
- IPC: G03B27/68

Abstract:
A semiconductor wafer is exposed with a pattern from a mask or reticle in an exposure tool. The exposure tool has an adjustable lens system and a light source, which is tunable in wavelength. A first exposure is performed with a tuned first wavelength and a first setting of the lenses. Prior to performing a second exposure onto the same wafer and into the same resist layer, the wavelength of the light source is varied to a second wavelength in order to mimic a focus offset. A resulting image shift at the slit edges of the scanning system due to chromatic aberration is then corrected for by setting the lens system in dependence of the difference between the tuned first and second wavelength. Having tuned second wavelength of the light source and having set the lens system, the second exposure is performed. A continuous adjustment of the lens system based upon a continuously varying light source wavelength can be accomplished.
Public/Granted literature
- US20060244937A1 Method for exposing a semiconductor wafer Public/Granted day:2006-11-02
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