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US07288461B2 Method of forming interconnect having stacked alignment mark 有权
形成具有堆叠对准标记的互连的方法

Method of forming interconnect having stacked alignment mark
摘要：
A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.
摘要（中）：

在衬底上形成第一膜层。 去除第一膜层的一部分以形成第一对准标记图案，并且形成第一导电层以填充第一对准标记图案以形成第一对准标记。 形成第二膜层，并且去除第二膜层的一部分以形成开口并形成第二对准标记图案。 形成第二导电层以填充开口以形成第一导线并填充第二对准标记图案以形成第二对准标记。 在第二膜层之上形成第三膜层和硬掩模层，并且去除硬掩模层和第三膜层的一部分以形成通孔。 在通路孔中形成第三导电层。

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