STACKED ALIGNMENT MARK AND METHOD FOR MANUFACTURING THEREOF
    1.
    发明申请
    STACKED ALIGNMENT MARK AND METHOD FOR MANUFACTURING THEREOF 有权
    堆叠对准标记及其制造方法

    公开(公告)号:US20070090548A1

    公开(公告)日:2007-04-26

    申请号:US11162117

    申请日:2005-08-29

    IPC分类号: H01L23/544

    摘要: A stacked alignment mark. The stacked alignment mark comprises a first alignment mark and a second alignment mark. The first alignment mark is located in a first film layer, wherein the first alignment mark is composed of a plurality of conductive wires. The second alignment mark is located in a second film layer under the first film layer. The first alignment mark is located in a first region corresponding to a second region in which the second alignment mark is located. Moreover, the second alignment mark at least contains a third region directly under a space between each two adjacent first conductive wires.

    摘要翻译: 堆叠对齐标记。 层叠的对准标记包括第一对准标记和第二对准标记。 第一对准标记位于第一膜层中,其中第一对准标记由多条导线构成。 第二对准标记位于第一膜层下面的第二膜层中。 第一对准标记位于对应于第二对准标记所在的第二区域的第一区域中。 此外,第二对准标记至少包含在每两个相邻的第一导电线之间的正下方的第三区域。

    METHOD OF FORMING INTERCONNECT HAVING STACKED ALIGNMENT MARK
    2.
    发明申请
    METHOD OF FORMING INTERCONNECT HAVING STACKED ALIGNMENT MARK 有权
    形成具有堆叠对齐标记的互连的方法

    公开(公告)号:US20070105364A1

    公开(公告)日:2007-05-10

    申请号:US11620057

    申请日:2007-01-05

    IPC分类号: H01L21/4763

    摘要: A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.

    摘要翻译: 在衬底上形成第一膜层。 去除第一膜层的一部分以形成第一对准标记图案,并且形成第一导电层以填充第一对准标记图案以形成第一对准标记。 形成第二膜层,并且去除第二膜层的一部分以形成开口并形成第二对准标记图案。 形成第二导电层以填充开口以形成第一导线并填充第二对准标记图案以形成第二对准标记。 在第二膜层之上形成第三膜层和硬掩模层,并且去除硬掩模层和第三膜层的一部分以形成通孔。 在通路孔中形成第三导电层。

    Method of forming interconnect having stacked alignment mark
    3.
    发明授权
    Method of forming interconnect having stacked alignment mark 有权
    形成具有堆叠对准标记的互连的方法

    公开(公告)号:US07288461B2

    公开(公告)日:2007-10-30

    申请号:US11620057

    申请日:2007-01-05

    IPC分类号: H01L21/76

    摘要: A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.

    摘要翻译: 在衬底上形成第一膜层。 去除第一膜层的一部分以形成第一对准标记图案,并且形成第一导电层以填充第一对准标记图案以形成第一对准标记。 形成第二膜层,并且去除第二膜层的一部分以形成开口并形成第二对准标记图案。 形成第二导电层以填充开口以形成第一导线并填充第二对准标记图案以形成第二对准标记。 在第二膜层之上形成第三膜层和硬掩模层,并且去除硬掩模层和第三膜层的一部分以形成通孔。 在通路孔中形成第三导电层。

    Stacked alignment mark and method for manufacturing thereof
    4.
    发明授权
    Stacked alignment mark and method for manufacturing thereof 有权
    堆叠对准标记及其制造方法

    公开(公告)号:US07288836B2

    公开(公告)日:2007-10-30

    申请号:US11162117

    申请日:2005-08-29

    IPC分类号: H01I23/02

    摘要: A stacked alignment mark. The stacked alignment mark comprises a first alignment mark and a second alignment mark. The first alignment mark is located in a first film layer, wherein the first alignment mark is composed of a plurality of conductive wires. The second alignment mark is located in a second film layer under the first film layer. The first alignment mark is located in a first region corresponding to a second region in which the second alignment mark is located. Moreover, the second alignment mark at least contains a third region directly under a space between each two adjacent first conductive wires.

    摘要翻译: 堆叠对齐标记。 层叠的对准标记包括第一对准标记和第二对准标记。 第一对准标记位于第一膜层中,其中第一对准标记由多条导线构成。 第二对准标记位于第一膜层下面的第二膜层中。 第一对准标记位于对应于第二对准标记所在的第二区域的第一区域中。 此外,第二对准标记至少包含在每两个相邻的第一导电线之间的正下方的第三区域。

    Liquid containing assembly
    7.
    发明授权

    公开(公告)号:US11383911B2

    公开(公告)日:2022-07-12

    申请号:US16835347

    申请日:2020-03-31

    申请人: Wei-Sheng Chia

    IPC分类号: B65D81/36 B65D61/02

    摘要: A liquid containing assembly includes a clamping device, a supplementary package and a positioning mechanism. The clamping device includes a first and second surrounding bodies rotatably connected to each other. A clamping space is formed when the first and second surrounding bodies are closed to each other. The supplementary package includes an accommodating body to accommodate liquid and an open tube connected to the accommodating body. The positioning mechanism includes a first positioning portion on a portion of the accommodating body adjacent to the open tube, a second positioning portion corresponding to the first positioning portion and is at least on one of the first and second surrounding bodies, a third positioning portion on the accommodating body, and a fourth positioning portion corresponding to the third positioning portion and at least on one of the first and second surrounding bodies.