发明授权
US07291886B2 Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
有权
用于高迁移率平面和多栅极MOSFET的混合衬底技术
- 专利标题： Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs
- 专利标题（中）： 用于高迁移率平面和多栅极MOSFET的混合衬底技术
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申请号： US10872605申请日： 2004-06-21
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公开(公告)号： US07291886B2公开(公告)日： 2007-11-06
- 发明人: Bruce B. Doris , Meikei Ieong , Edward J. Nowak , Min Yang
- 申请人： Bruce B. Doris , Meikei Ieong , Edward J. Nowak , Min Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Ido Tuchman, Esq.
- 主分类号： H01L27/01
- IPC分类号： H01L27/01 ; H01L27/12
摘要：
A hybrid substrate having a high-mobility surface for use with planar and/or multiple-gate metal oxide semiconductor field effect transistors (MOSFETs) is provided. The hybrid substrate has a first surface portion that is optimal for n-type devices, and a second surface portion that is optimal for p-type devices. Due to proper surface and wafer flat orientations in each semiconductor layers of the hybrid substrate, all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface. The present invention also provides for a method of fabricating the hybrid substrate as well as a method of integrating at least one planar or multiple-gate MOSFET thereon.
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